Перегляд за автором "Tartachnyk, V."

Сортувати за: Порядок: Результатів:

  • Behaviour of manganese impurity in β-ZnP₂ 
    Kakazej, M.; Kudin, A.; Pinkovs’ka, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Behavior of manganese impurity in black zinc diphosphide was investigated for the first time by the EPR method at room temperature. The nature of basic singularities of an EPR spectrum was determined. The defect structure ...
  • Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells 
    Konoreva, O.; Opilat, V.; Pinkovska, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In this work, GaP p-n junctions used in light-diode manufacturing were studied using the electrophysical methods at various temperatures. Current-voltage characteristics of some diodes, controlled by PC and measured in the ...
  • Influence of complex defects on electrophysical properties of GaP light emitting diodes 
    Konoreva, O.; Malyj, E.; Mamykin, S.; Petrenko, I.; Pinkovska, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    In order to estimate the role of complex defects on GaP light emitting diodes (LED) operation, luminescent and electrical characteristics of GaP LEDs irradiated with reactor neutrons have been studied. It has been stated ...
  • Peculiarities of neutron irradiation influence on GaP light-emitting structures 
    Litovchenko, P.; Litovchenko, A.; Konoreva, O.; Opilat, V.; Pinkovska, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) ...
  • Peculiarities of optical absorption near-edge in irradiated GaP:Te 
    Konoreva, O.; Litovchenko, P.; Manzhara, V.; Opilat, V.; Tartachnyk, V. (Functional Materials, 2010)
  • Radiation influence on characteristics of GaP light emitting diodes 
    Borzakovskyj, A.; Gontaruk, O.; Kochkin, V.; Litovchenko, P.; Opilat, V.; Petrenko, I.; Tartachnyk, V. (Functional Materials, 2009)
    The capacitance properties of GaP green and red LEDs have been studied. It was found the character of a doping impurity distribution in the depleted region and the junction depth dependence on bias voltage and impurity ...
  • Radiative recombination in initial and electron-irradiated GaP crystals 
    Hontaruk, O.; Konoreva, O.; Litovchenko, P.; Manzhara, V.; Opilat, V.; Pinkovska, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Photoluminescence of GaP crystals irradiated by 1 MeV electrons was studied at 4.2 K. Samples were prepared using various technologies and doped by Te, Zn, Mg and N. Emission spectra were analyzed as dependent on the ...